期刊
APPLIED SURFACE SCIENCE
卷 434, 期 -, 页码 822-830出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2017.11.016
关键词
Resistive switching; RRAM; Hafnium oxide; ALD; Oxygen vacancies
类别
资金
- National Research Foundation of Korea (NRF) - Ministry of science, ICT AMP
- Future Planning [NRF-2016M3A7B4910426]
- Future Semiconductor Device Technology Development Program - MOTIE (Ministry of Trade, Industry Energy) [10044842]
- KSRC (Korea Semiconductor Research Consortium)
- National Research Foundation of Korea [2016M3A7B4910426] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a modulation of oxygen vacancies profile in atomic layer deposition (ALD) HfO2-x thin films by reducing oxidant pulse time (0.7 s-0.1 s) and study its effect on resistive switching behavior with a Ti/HfO2-x/Pt structure. Hf 4f spectra of x-ray photoelectron microscopy (XPS) and depth profile confirm varied oxygen vacancies profiles by shifts of binding energies of Hf 4f5/2 and Hf 4f7/2 main peaks and its according HfO2-x sub-oxides for each device. The ultraviolet photoelectron spectroscopy (UPS) confirms different electron affinity (chi) of HfO2 and HfO2-x thin films, implying that barrier height at Ti/oxide interface is reduced. Current transport mechanism is dictated by Ohmic conduction in fully oxidized HfO2 thin films - Device A (0.7 s) and by Trap Filled Space Charge Limited Conduction (TF-SCLC) in less oxidized HfO2-x thin films - Device B (0.3 s) and Device C (0.1 s). A switching mechanism related to the oxygen vacancies modulation in Ti/HfO2-x/Pt based resistive random access memory (RRAM) devices is used to explain carefully notified current transport mechanism variations from device-to-device. A proper endurance and long-time retention characteristics of the devices are also obtained. (c) 2017 Elsevier B.V. All rights reserved.
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