期刊
APPLIED SURFACE SCIENCE
卷 428, 期 -, 页码 61-65出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2017.09.053
关键词
ZnO; Heterojunction; Magnetron sputtering; UV
类别
资金
- National Natural Science Foundation of China [11375112]
- Science and Technology Commission of Shanghai [16010500500]
ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current. (C) 2017 Elsevier B.V. All rights reserved.
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