期刊
APPLIED PHYSICS LETTERS
卷 113, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5040658
关键词
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资金
- JSPS KAKENHI [15K18043]
- Osaka University
- Kyoto University
- Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan
- Grants-in-Aid for Scientific Research [15K18043] Funding Source: KAKEN
Dislocations in semiconductor crystals are desirably minimized as much as possible, since their presence typically deteriorates device performance. While diamond electronics have demonstrated superior device properties, they have not fulfilled their material limit yet. To further improve device performance, a low dislocation density and a high-quality epitaxial layer are required. In this study, diamond films are homoepitaxially grown by hot-filament chemical vapor deposition accompanying W incorporations from heated metal-wires. The films exhibited better crystalline quality than seed substrates: a large reduction of threading dislocation from 2 x 10(6) to 3 x 10(4) cm(-2) was demonstrated. The dislocation propagation was partially annihilated by W impurities. The electrical properties of Schottky barrier diodes after dislocation reduction were highly uniform, improved rectifying actions. Published by AIP Publishing.
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