期刊
APPLIED PHYSICS LETTERS
卷 112, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5017045
关键词
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资金
- National Science Foundation [ECCS-1408416, PFI AIR-TT 1640700]
- OSU TCO Accelerator Award
- Air Force Office of Scientific Research (AFOSR) [FA9550-17-1-0227]
- Office of Naval Research (ONR) [N00014-15-1-2363]
- U.S. Department of Energy's National Nuclear Security Administration [DE-NA-0003525]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1408416] Funding Source: National Science Foundation
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 x 10(-3) Omega cm(2) obtained at 1 kA/cm(2). Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm(2) was 54.4 W/cm(2), confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters. Published by AIP Publishing.
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