期刊
APPLIED PHYSICS LETTERS
卷 112, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5020054
关键词
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资金
- National Science Foundation [NSF-ECCS 1740136, 1508541]
- NCORE, a wholly owned subsidiary of the Semiconductor Research Corporation (SRC)
- Centre National de la Recherche Scientifique (CNRS)
- Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA), France
- French National Research Agency (ANR) as part of the Investissements d'Avenir [ANR-17-CE09-0016-05]
- Agence Nationale de la Recherche (ANR) [ANR-17-CE09-0016] Funding Source: Agence Nationale de la Recherche (ANR)
The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 +/- 0.09m(e), while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 +/- 0.1m(e). The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor. Published by AIP Publishing.
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