Homogeneous molybdenum disulfide tunnel diode formed&IT via&IT chemical doping

We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 x 10(13)cm(-2)) and p-type (1.1 x 10(13)cm(-2)) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions. Published by AIP Publishing.