GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000V using local substrate removal and AlN ultra-wide bandgap

We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 mu A/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-mu m-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10m Omega center dot cm(2). (C) 2018 The Japan Society of Applied Physics