期刊
APPLIED OPTICS
卷 57, 期 3, 页码 538-543出版社
OPTICAL SOC AMER
DOI: 10.1364/AO.57.000538
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资金
- National Natural Science Foundation of China (NSFC) [11404029, 51172208, 51572033]
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (BUPT)
High-quality cerium-doped beta-Ga2O3 (Ga2O3:Ce) thin films could be achieved on (0001)alpha-Al2O3 substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that Ga2O3:Ce films are highly ((2) over bar 01) oriented, and the lattice spacing of the ((4) over bar 02) planes is sensitive to the Ce doping level. The prepared Ga2O3:Ce films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet-blue-green region, which are associated with the donor-acceptor transitions with the Ce3+ and oxygen vacancies related defects. A simple DUV photodetector device with a metal-semiconductor-metal structure has also been fabricated based on Ga2O3:Ce thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices. (C) 2018 Optical Society of America
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