期刊
PHYSICAL REVIEW B
卷 93, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.93.235403
关键词
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资金
- Fundacao para a Ciencia e a Tecnologia (Portugal) [SFRH/BD/78987/2011]
- European Commission through the project Graphene Driven Revolutions in ICT and Beyond [696656]
- Fundacao para a Ciencia e a Tecnologia (Portugal) in the framework of the Strategic Funding [UID/FIS/04650/2013]
- Fundação para a Ciência e a Tecnologia [SFRH/BD/78987/2011] Funding Source: FCT
In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (h-BN) slab and the graphene layers in the vertical current of a a graphene/h-BN/graphene device. We show how for small rotational angles, the transference of momentum by the h-BN crystal lattice leads to multiple peaks in the I-V curve of the device, giving origin to multiple regions displaying negative differential conductance. We also study the effect of scattering by phonons in the vertical current and see how the opening up of inelastic tunneling events allowed by spontaneous emission of optical phonons leads to sharp peaks in the second derivative of the current.
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