期刊
PHYSICAL REVIEW B
卷 93, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.93.201304
关键词
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资金
- Marie Sklodowska-Curie Action of the European Union (project NITRIDE-SRH) [657054]
- US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0010689]
- DOE Office of Science [DE-AC02-05CH11231]
- Marie Curie Actions (MSCA) [657054] Funding Source: Marie Curie Actions (MSCA)
Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with the energy of the transition, the mechanisms by which such recombination can take place in wide-band-gap materials are unclear. Using electronic structure calculations we uncover the crucial role of electronic excited states in nonradiative recombination processes. The impact is elucidated with examples for the group-III nitrides, for which accumulating experimental evidence indicates that defect-assisted recombination limits efficiency. Our work provides insights into the physics of nonradiative recombination, and the mechanisms are suggested to be ubiquitous in wide-band-gap semiconductors.
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