4.8 Article

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors

期刊

ADVANCED MATERIALS
卷 30, 期 17, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201705642

关键词

interfacial effects; micro/nanostructure; molecular structures; organicfield-effect transistors; sensors

资金

  1. Fundamental Research Funds for the Central Universities of China
  2. 1000 Youth Talent Plan
  3. National Nature Science Foundation of China [51741302, 51603151, 51373123]
  4. National Key Research and Development Program of China [2017YFA0103900, 2017YFA0103904]

向作者/读者索取更多资源

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications.

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