4.8 Article

Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus

期刊

ADVANCED MATERIALS
卷 30, 期 13, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201705088

关键词

2D materials; triboelectric nanogenerators; tribotronic logic inverters; tribotronic transistors

资金

  1. National Natural Science Foundation of China [61405040, 51622205, 61675027, 51432005, 61505010, 61306105, 51502018, 51605034]
  2. National Key Research and Development Program of China [2016YFA0202703, 2016YFA0202704]
  3. Thousand Talents program of China for pioneering researchers and innovative teams
  4. Hundred Talents Program of the Chinese Academy of Science

向作者/读者索取更多资源

With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA mu m(-1) . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to approximate to 13.8) and power consumptions (approximate to 1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.

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