4.8 Review

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials

期刊

ADVANCED MATERIALS
卷 30, 期 35, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201706262

关键词

inorganic materials; photodetectors; p-type materials; semiconductors

资金

  1. National Natural Science Foundation of China [51721002, 11674061, 1171101215, 51471051]
  2. Science and Technology Commission of Shanghai Municipality [17520742400, 15520720700]
  3. National Program for Support of Top-notch Young Professionals
  4. Programs for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning

向作者/读者索取更多资源

Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据