期刊
ADVANCED MATERIALS
卷 30, 期 35, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201706262
关键词
inorganic materials; photodetectors; p-type materials; semiconductors
类别
资金
- National Natural Science Foundation of China [51721002, 11674061, 1171101215, 51471051]
- Science and Technology Commission of Shanghai Municipality [17520742400, 15520720700]
- National Program for Support of Top-notch Young Professionals
- Programs for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
Photoelectric detectors are the central part of modern photodetection systems with numerous commercial and scientific applications. p-Type semiconductor materials play important roles in optoelectronic devices. Photodetectors based on p-type semiconductor materials have attracted a great deal of attention in recent years because of their unique properties. Here, a comprehensive summary of the recent progress mainly on photodetectors based on inorganic p-type semiconductor materials is presented. Various structures, including photoconductors, phototransistors, homojunctions, heterojunctions, p-i-n junctions, and metal-semiconductor junctions of photodetectors based on inorganic p-type semiconductor materials, are discussed and summarized. Perspectives and an outlook, highlighting the promising future directions of this research field, are also given.
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