期刊
ADVANCED MATERIALS
卷 30, 期 33, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201801794
关键词
2D electron system; c-AFM lithography; complex oxides; quantum transport; superconductivity
类别
资金
- Vannevar Bush Faculty Fellowship program - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- Office of Naval Research [N00014-15-1-2847]
- Independent Research Fund Denmark [6111-00145B]
Complex oxide heterostructures have fascinating emergent properties that originate from the properties of the bulk constituents as well as from dimensional confinement. The conductive behavior of the polar/nonpolar LaAlO3/SrTiO3 interface can be reversibly switched using conductive atomic force microscopy (c-AFM) lithography, enabling a wide range of devices and physics to be explored. Here, extreme nanoscale control over the CaZrO3/SrTiO3 (CZO/STO) interface, which is formed from two materials that are both nonpolar, is reported. Nanowires with measured widths as narrow as 1.2 nm are realized at the CZO/STO interface at room temperature by c-AFM lithography. These ultrathin nanostructures have spatial dimensions at room temperature that are comparable to single-walled carbon nanotubes, and hold great promise for alternative oxide-based nanoelectronics, as well as offer new opportunities to investigate the electronic structure of the complex oxide interfaces. The cryogenic properties of devices constructed from quasi-1D channels, tunnel barriers, and planar gates exhibit gate-tunable superconductivity, quantum oscillations, electron pairing outside of the superconducting regime, and quasi-ballistic transport. This newly demonstrated ability to control the metal-insulator transition at nonpolar oxide interface greatly expands the class of materials whose behavior can be patterned and reconfigured at extreme nanoscale dimensions.
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