Magnetic-Induced-Piezopotential Gated MoS2 Field-Effect Transistor at Room Temperature

Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field-effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro-nanoelectronics. Here, a new type of magnetic-induced-piezopotential gated field-effect-transistor (MIPG-FET) base on laminate composites is proposed, which consists of Terfenol-D, a ferroelectric single crystal (PMNPT), and MoS2 flake. When applying an external magnetic field to the MIPG-FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol-D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 mu A in the P-up state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 mu A in the P-down state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro-electromechanical systems, and human-machine interfacing.