期刊
ADVANCED MATERIALS
卷 30, 期 16, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201706260
关键词
2D; organic field-effect transistors; organic electronics; organic single crystals; phototransistors
类别
资金
- Ministry of Science and Technology of China [2016YFB0401100, 2017YFA0204503, 2015CB856502]
- National Natural Science Foundation of China [51733004, 91433115, 51633006, 51703160, 21661132006, 21473222]
- Strategic Priority Research Program [XDB12000000]
- Youth Innovation Promotion Association of the Chinese Academy of Sciences
Organic field-effect transistors and near-infrared (NIR) organic phototransistors (OPTs) have attracted world's attention in many fields in the past decades. In general, the sensitivity, distinguishing the signal from noise, is the key parameter to evaluate the performance of NIR OPTs, which is decided by responsivity and dark current. 2D single crystal films of organic semiconductors (2DCOS) are promising functional materials due to their long-range order in spite of only few molecular layers. Herein, for the first time, air-stable 2DCOS of n-type organic semiconductors (a furan-thiophene quinoidal compound, TFT-CN) with strong absorbance around 830 nm, by the facile drop-casting method on the surface of water are successfully prepared. Almost millimeter-sized TFT-CN 2DCOS are obtained and their thickness is below 5 nm. A competitive field-effect electron mobility (1.36 cm(2) V-1 s(-1)) and high on/off ratio (up to 10(8)) are obtained in air. Impressively, the ultrasensitive NIR phototransistors operating at the off-state exhibit a very low dark current of approximate to 0.3 pA and an ultrahigh detectivity (D*) exceeding 6 x 10(14) Jones because the devices can operate in full depletion at the off-state, superior to the majority of the reported organic-based NIR phototransistors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据