期刊
ADVANCED FUNCTIONAL MATERIALS
卷 28, 期 28, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201801524
关键词
anisotropy; black phosphorus; nanoribbons; phosphorene; transistors
类别
资金
- A*STAR Science and Engineering Research Council [152-70-00013]
- National Research Foundation, Prime Minister's Office, Singapore
Achieving excellent electrostatic control and immunity to short channel effects are the formidable challenges in ultrascaled devices. 3D device architectures, such as nanoribbon, have successfully mitigated these problems by achieving uniform top- and side-wall control of the channel. Here, by leveraging on the merits of 3D structure, high-mobility black phosphorus nanoribbon field-effect transistors (BPNR-FET) are demonstrated and the anisotropic transport properties are systematically investigated. A simple top-down reactive ion etching method is used to realize both armchair- and zigzag-oriented nanoribbons with various widths down to 60 nm. The mobility of BPNR-FET is found to be width- and thickness-dependent, with the highest hole mobility of approximate to 862 cm(2) V-1 s(-1) demonstrated in armchair-oriented device at room temperature by combining high- gate dielectric and hydrogen treatment to reduce sidewall scattering. Furthermore, hydrogenation effectively passivates the nanoribbon dangling bonds, leading to hysteresis and contact resistance improvement. This work unravels the superior electrical performance underscore a conceptually new device based on BP nanoribbons, paving the way toward the development of nonplanar devices on 2D materials platform.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据