期刊
ADVANCED FUNCTIONAL MATERIALS
卷 28, 期 34, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201802011
关键词
BP-InSe heterojunctions; multifunctional optoelectronic devices; polarization sensitive photocurrents
类别
资金
- MOST of China [2016YFA0200602, 2015CB932302]
- National Natural Science Foundation of China (NSFC) [21421063, 11474260, 11374274, 11504364, 11621063, 21633007]
- Chinese Academy of Sciences (CAS) [XDB01020200]
- Fundamental Research Funds for the Central Universities [WK2030020027, WK2060190084, WK3510000004]
The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high-performance electronic and optoelectronic devices. In this study, a vertical p-n diode is constructed by vertically stacking p-type few-layer black phosphorus (BP) on n-type few-layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate-modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization-sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero-bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach approximate to 3%, which is impressive for BP-based devices. The results pave the way for the implementation of p-BP/n-InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization-sensitive applications.
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