期刊
ADVANCED FUNCTIONAL MATERIALS
卷 28, 期 35, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201802723
关键词
insulating bandgaps; molecular beam epitaxy; stanene
类别
资金
- National Natural Science Foundation of China [51661135024]
- Ministry of Science and Technology of China [2017YFA0303303]
- Beijing Advanced Innovation Center for Future Chip (ICFC)
- Tsinghua University Initiative Scientific Research Program
- National Thousand-Young-Talents Program
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
The exploration of intriguing topological quantum physics in stanene has attracted enormous interest but is challenged by lacking desirable material samples. The successful fabrication of monolayer stanene on PbTe(111) films with low-temperature molecular beam epitaxy and thorough characterizations of its atomic and electronic structures are reported here. In situ angle-resolved photoemission spectroscopy together with first-principles calculations identify two hole bands of p(xy) orbital with a spin-orbit coupling induced band splitting and meanwhile reveal an automatic passivation of p(z) orbital of stanene. Importantly, material properties are tuned by substrate engineering, realizing a decorated stanene sample with truly insulating bulk on Sr-doped PbTe. This finding paves a road for studies of stanene-based topological quantum effects and electronics.
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