期刊
DAE SOLID STATE PHYSICS SYMPOSIUM 2015
卷 1731, 期 -, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4947682
关键词
GaN; nanowire; CVD; PL
Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.
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