期刊
ACS NANO
卷 12, 期 6, 页码 5873-5879出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b02001
关键词
atomic positioning single-atom manipulation; scanning transmission electron microscopy (STEM); dopants; bismuth in silicon; quantum materials; quantum computing
类别
资金
- UT-Battelle, LLC [DE-AC0S-00OR22725]
- U.S. Department of Energy
- Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
- DOE [DE-FG02-09ER46554]
- Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron. microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据