4.8 Article

Atomic Scale Photodetection Enabled by a Memristive Junction

期刊

ACS NANO
卷 12, 期 7, 页码 6706-6713

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b01811

关键词

atomic contacts; photodetection; quantum plasmonics; memristor; surface plasmons; local oxidation; silicon photonics; ab initio calculation

资金

  1. Volkswagen Stiftung
  2. Werner Siemens Stiftung Centre for Single-Atom Electronics and Photonics
  3. ETH Zurich [3515-2]
  4. Swiss National Supercomputing Centre [s714]
  5. Robert A. Welch Foundation [C-1222]
  6. U.S. National Science Foundation [ECCS-1610229]

向作者/读者索取更多资源

The optical control of atomic relocations in a metallic quantum point contact is of great interest because it addresses the fundamental limit of CMOS scaling. Here, by developing a platform for combined electronics and photonics on the atomic scale, we demonstrate an optically controlled electronic switch based on the relocation of atoms. It is shown through experiments and simulations how the interplay between electrical, optical, and light-induced thermal forces can reversibly relocate a few atoms and enable atomic photodetection with a digital electronic response, a high resistance extinction ratio (70 dB), and a low OFF-state current (10 pA) at room temperature. Additionally, the device introduced here displays an optically induced pinched hysteretic current (optical memristor). The photodetector has been tested in an experiment with real optical data at 0.5 Gbit/s, from which an eye diagram visualizing millions of detection cycles could be produced. This demonstrates the durability of the realized atomic scale devices and establishes them as alternatives to traditional photodetectors.

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