期刊
ACS NANO
卷 12, 期 7, 页码 7239-7245出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b03291
关键词
SnSe; SnS; nanowire; chemical vapor deposition; near-infrared photodetector
类别
资金
- National Natural Science Foundation of China [61725505, 11734016, 61521005]
- Key Research Project of Frontier Science of Chinese Academy of Sciences [QYZDB-SSW-JSC031]
- Fund of Shanghai Natural Science Foundation [18ZR1445800]
- Hubei Province Natural Science Foundation [2018CFB567]
- Royal Society-Newton Advanced Fellowship [NA170214]
- CAS Interdisciplinary Innovation Team
- National Program for Support of Top-notch Young Professionals
Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 X 10(4) (2.8 X 10(4)), good responsivity of 1.0 X 10(4) A W-1 (1.6 X 10(4) A W-1), and excellent detectivity of 3.3 X 10(12) Jones (2.4 X 10(12) Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 mu s (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.
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