期刊
ACS NANO
卷 12, 期 2, 页码 965-975出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.7b07059
关键词
two-dimensional materials; transition metal dichalcogenides; tungsten diselenide (WSe2); metal-organic chemical vapor deposition (MOCVD); van der Waals epitaxy; field-effect transistors
类别
资金
- NSF under the US/Ireland UNITE collaboration [1407765]
- Center for Low Energy Systems Technology (LEAST)
- National Science Foundation (NSF) [DMR 1609060]
- Southwest Academy on Nanoelectronics (SWAN) - Nanoelectronic Research Initiative
- MARCO
- NIST
- DARPA
- Center for Atomically Thin Multifunctional Coatings - National Science Foundation (NSF) division of Industrial, Innovation & Partnership (HP) [1540018]
- 2DCC-MIP through NSF [DMR-1539916]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1407765] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1540018] Funding Source: National Science Foundation
Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe2) via metal organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe2/sapphire exhibit ambipolar behavior with excellent on/off ratios (similar to 10(7)), high current density (1-10 mu A.mu m(-1)), and good field-effect transistor mobility (similar to 30 cm(2).V-1.s(-1)) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.
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