期刊
ACS NANO
卷 12, 期 2, 页码 2008-2016出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.8b00015
关键词
direct graphene synthesis via CVD; Ti buffer layer; flexible substrate; synthesis temperature of 150 degrees C; defect-free monolayer graphene
类别
资金
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [NRF-2015R1A2A1A01003867]
Direct graphene synthesis on substrates via chemical vapor deposition (CVD) is an attractive approach for manufacturing flexible electronic devices. The temperature for graphene synthesis must be below similar to 200 degrees C to prevent substrate deformation while fabricating flexible devices on plastic substrates. Herein, we report a process whereby defect-free graphene is directly synthesized on a variety of substrates via the introduction of an ultrathin Ti catalytic layer, due to the strong affinity of Ti to carbon. Ti with a thickness of 10 nm was naturally oxidized by exposure to air before and after the graphene synthesis, and the various functions of neither the substrates nor the graphene were influenced. This report offers experimental evidence of high-quality graphene synthesis on Ti-coated substrates at 150 degrees C via CVD. The proposed methodology was applied to the fabrication of flexible and transparent thin-film capacitors with top electrodes of high-quality graphene.
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