期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 30, 页码 25529-25535出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b07778
关键词
ferroelectric oxides; epitaxial oxides on silicon; strain engineering; barium titanate; pulsed laser deposition; dipole maps
资金
- Spanish Ministry of Science, Innovation and Universities through the SeveroOchoa Programme for Centres of Excellence in RD [SEV-2015-0496]
- Spanish Ministry of Science, Innovation and Universities through the AEI/FEDER, EU [MAT2017-85232-R]
- Spanish Ministry of Science, Innovation and Universities [MAT2014-56063-C2-1-R, MAT2015-73839-JIN]
- Generalitat de Catalunya [2017 SGR 1377]
- China Scholarship Council (CSC) [201506080019]
- RyC [RC-2012-11709, RYC-2017-22531]
- U.S. Department of Energy (DOE), Basic Energy Sciences (BES), Materials Sciences and Engineering Division
- Spanish Ministry of Economy and Competitiveness [SEV-2015-0496-16-3]
Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (epsilon > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.
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