期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 28, 页码 24232-24241出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b00770
关键词
inorganic/organic bilayer hole injection layers; tungsten oxide; quantum dot light-emitting diodes; solution-processed; balance charge
资金
- National Natural Science Foundation of China [U1604261, 61376061, 51572070, 61605041]
- Program for Changjiang Scholars and Innovative Research Team in University [PCSIRT15R18]
Even though chemically stable metal oxides (MOs), as substitutes for poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), have been successfully adopted for improving device stability in solution-processed quantum dot light-emitting diodes (QLEDs), the efficiencies of QLEDs are at a relatively low level. In this work, a novel architecture of QLEDs has been introduced, in which inorganic/organic bilayer hole injection layers (HILs) were delicately designed by inserting an amorphous WO3 interlayer between PEDOT:PSS and the indium tin oxide anode. As a result, the efficiency and operational lifetime of QLEDs were improved simultaneously. The results show that the novel architecture QLEDs relative to conventional PEDOT:PSS-based QLEDs have an enhanced external quantum efficiency by a factor of 50%, increasing from 8.31 to 12.47%, meanwhile exhibit a relatively long operational lifetime (12 551 h) and high maximum brightness (>40 000 cd m(-2)) resulting from a better pathway for hole injection with staircase energy-level alignment of the HILs and reduction of surface roughness. Our results demonstrate that the novel architecture QLEDs using bilayer MO/PEDOT:PSS HILs can achieve long operational lifetime without sacrificing efficiency.
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