期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 7, 页码 6463-6470出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b01036
关键词
photoelectric memrisitor; artificial synapse; heterojunction; persistent photoconductivity; volatile resistive switching
资金
- National Natural Science Foundation of China [51772112, 51302095, 51372094]
- Fundamental Research Funds for the Central Universities (HUST) [2016YXZD058]
With the end of Moore's law in sight, new computing architectures are urgently needed to satisfy the increasing demands for big data processing. Neuromorphic architectures with photoelectric learning capability are good candidates for energy efficient computing for recognition and classification tasks. In this work, artificial synapses based on the ZnO1-x/AlOy), heterojunction were fabricated and the photoelectric plasticity was investigated. Versatile synaptic functions such as photoelectric short-term/long-term plasticity, paired-pulse facilitation, neuromorphic facilitation, and depression were emulated based on the inherent persistent photoconductivity and volatile resistive switching characteristics of the device. It is found that the naturally formed AlOy), layer provides traps for photogenerated holes, resulting in a significant persistent photoconductivity effect. Moreover, the resistive switching can be attributed to the electron trapping/detrapping at the trapping sites in the AlOy layer.
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