期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 29, 页码 24620-24626出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b07079
关键词
CsPb1-xBixI3; perovskite; resistive switching; multilevel high-resistance states; memory device
资金
- National Natural Science Foundation of China [51571006]
All-inorganic CsPb1-xBixI3 perovskite film was successfully fabricated by incorporating Bi3+ in CsPbI3 to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb1-xBixI3/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb1-xBixI3/ITO device potential application for multilevel data storage in a nonvolatile memory device.
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