期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 24, 页码 20219-20224出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b04065
关键词
Bernal-stacked BLG; amplifiers; mixers; power gain; voltage gain; conversion gain
资金
- Natural Science Foundation of China [61574066, 61390504]
- technology innovation project of Hubei Province [2017AAA127]
Tunable bandgap can be induced in Bernal-stacked bilayer graphene by a perpendicularly electric displacement field. Here, we carry out a comprehensive study on the material synthesis of CVD Bernal-stacked bilayer graphene and devices for amplifying and mixing at high frequencies. The transistors show large output current density with excellent current saturation with high intrinsic voltage gain up to 77. Positive extrinsic forward power gain vertical bar S-21 vertical bar(2) has been obtained up to 5.6 GHz as well as high conversion gain of -7 dB for the mixers. The conversion gain dependence on tunable on/off ratio of the transistors has also been discussed.
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