期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 29, 页码 24886-24891出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b07506
关键词
electron irradiation; single photon emitters; hexagonal boron nitride; quantum emitters; defects; quantum photonics
资金
- Australian Research Council [DP140102721, DP180100077, LP170100150]
- Asian Office of Aerospace Research and Development [FA2386-17-1-4064]
- Office of Naval Research Global [N62909-18-1-2025]
- Elemental Strategy Initiative by the MEXT, Japan
- JSPS KAKENHI [JP15K21722]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1538127] Funding Source: National Science Foundation
Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (similar to MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes-namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material-and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
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