4.8 Article

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 29, 页码 24339-24343

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b07465

关键词

Printing; solution process; hydrogen plasma; metal complex; metal oxide; transistor

资金

  1. JSPS KAKENHI [17K18410, 16H06382]
  2. Academy of Finland under Project ROXI [305450]
  3. Grants-in-Aid for Scientific Research [17K18410] Funding Source: KAKEN
  4. Academy of Finland (AKA) [305450, 305450] Funding Source: Academy of Finland (AKA)

向作者/读者索取更多资源

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoOx and a plasma-protecting layer of ZrOx situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm(2)/(V s) is demonstrated.

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