期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 19, 页码 16881-16886出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b03274
关键词
electrical double layer; flexible device; artificial synapse; spike-timing-dependent plasticity (STDP); learning abilities
资金
- Zhejiang Provincial Natural Science Foundation of China [LR18F040002]
- Ningbo Science and Technology Innovation Team [2016B10005]
- National Natural Science Foundation of China [11474293, 61604085]
- Youth Innovation Promotion Association CAS [2014259]
- Chinese Academy of Sciences [QYZDB-SSW-JSC047]
- CAS Interdisciplinary Innovation Team
Recently, environment-friendly electronic devices are attracting increasing interest. Green artificial synapses with learning abilities are also interesting for neuromorphic platforms. Here, solution-processed chitosan-based polysaccharide electrolyte-gated indium tin oxide (ITO) synaptic transistors are fabricated on polyethylene terephthalate substrate. Good transistor performances against mechanical stress are observed. Short-term synaptic plasticities are mimicked on the proposed ITO synaptic transistor. When applying presynaptic and postsynaptic spikes on gate electrode and drain electrode respectively, spike-timing-dependent plasticity function is mimicked on the synaptic transistor. Transitions from sensory memory to short-term memory (STM) and from STM to long-term memory are also mimicked, demonstrating a multistore model brain memory. Furthermore, the flexible ITO synaptic transistor can be dissolved in deionized water easily, indicating potential green neuromorphic platform applications.
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