期刊
ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 12, 页码 9894-9899出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.8b00526
关键词
CIGS thin-film solar cell; solution-process; grain growth; p-n junction; interface engineering; band alignment
资金
- Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant [20163010012570]
- KU-KIST program - Ministry of Science and ICT
An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel 3-step chalcogenization process for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable spike type conduction band alignment instead of cliff type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.
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