4.8 Article

Composition-Dependent Aspect Ratio and Photoconductivity of Ternary (Bixsb1-x)2S3 Nanorods

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 10, 期 8, 页码 7334-7343

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.7b17253

关键词

ternary nanorods; colloidal synthesis; photoconductivity; thiol passivation; S vacancies; surface oxidation; optoelectronic devices

资金

  1. Research Foundation of Jiangsu University [11JDG071]
  2. NSFC [21201086, 21571086]
  3. China Postdoctoral Science Foundation [2014M550267, 2015T80501]
  4. Natural Science Foundation of Jiangsu Province [BK20141297]
  5. Cultivating Project of Young Academic Leader of Jiangsu University [11JDG071]

向作者/读者索取更多资源

The chemical composition, size and shape, and surface engineering play key roles in the performance of electronic, optoelectronic, and energy devices. V2VI3 (V = Sb, Bi; VI = S, Se) group materials are actively studied in these fields. In this paper, we introduce a colloidal method to synthesize uniform ternary (BixSb1-x)(2)S-3 (0 < x < 1) nanorods. These nanorods show composition-dependent aspect ratios, enabling their composition, size, and shape control by varying Bi/Sb precursor ratios. It is found that the surface passivation by various thiols (L-SH) efficiently enhances the photoconductivity and optical responsive capability of (BixSb1-x)(2)S-3 nanorods when used as active materials in indium tin oxide (ITO)/(BixSb1-x)(2)S-3/ITO optoelectronic devices. Meanwhile, the increase of Sb content causes a gradual deterioration of photoconductivity of thiol-passivated nanorods. We propose that the thiol passivation is able to reduce the number of S vacancies, which act as the recombination centers (trapped states) for photogenerated electrons and holes, and thus boosts the carrier transport in (BixSb1-x)(2)S-3 nanorods, and in particular that the composition-related conductivity deterioration is attributed to the increase of unpassivated S vacancies and surface oxidation due to the rise of Sb content.

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