A Novel Chemical Route to Atomic Layer Deposition of ZnS Thin Film from Diethylzinc and 1,5-Pentanedithiol

This study describes a novel chemical route to grow ZnS thin films via atomic layer deposition (ALD). By using diethylzinc and 1,5-pentanedithiol as precursors of Zn and S, respectively, ZnS films are grown on substrates with an atomic precision by repeating self-limiting chemisorption of each precursor. The growth-per-cycle of the ALD process is around 0.1 angstrom per cycle at 150 degrees C, and the as-grown films are characterized to be amorphous ZnS by X-ray diffraction and X-ray photoelectron spectroscopy.