Strained fold-assisted transport in graphene systems

Deformations in graphene systems are central elements in the novel field of straintronics. Various strain geometries have been proposed to produce specific properties, but their experimental realization has been limited. Because strained folds can be engineered on graphene samples on appropriate substrates, we study their effects on graphene transport properties. We show the existence of an enhanced local density of states (LDOS) along the direction of the strained fold that originates from localization of higher energy states and provides extra conductance channels at lower energies. In addition to exhibiting sublattice symmetry breaking, these states are valley polarized, with quasiballistic properties in smooth disorder potentials. We confirmed that these results persist in the presence of strong edge disorder, making these geometries viable electronic waveguides. These findings could be tested in properly engineered experimental settings.