期刊
SCIENCE ADVANCES
卷 3, 期 8, 页码 -出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.1700481
关键词
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资金
- Air Force Office of Scientific Research [FA9550-14-1-0251]
- NSF EFRI 2-DARE grant [1542883]
- Stanford Initiative for Novel Materials and Processes (INMP)
- Department of Energy (DOE), Office of Basic Energy Sciences, Division of Material Sciences
- DOE, Office of Basic Energy Sciences [DE-AC02-76SF00515, DE-AC02-06CH11357]
- NSF
- Natural Sciences and Engineering Research Council (NSERC)
- Emerging Frontiers & Multidisciplinary Activities [1542883] Funding Source: National Science Foundation
The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality native insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable high-k native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 10(6); on current, similar to 30 mu A/mm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-k dielectrics, and scaling benefits from their atomically thin nature.
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