4.8 Article

Inducing superconductivity in Weyl semimetal microstructures by selective ion sputtering

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SCIENCE ADVANCES
卷 3, 期 5, 页码 -

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AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.1602983

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资金

  1. Office of Naval Research under Electrical Sensors and Network Research Division [N00014-15-1-2674]
  2. Gordon and Betty Moore Foundation [GBMF4374]
  3. Max Planck Society
  4. EPSRC [EP/I007002/1]
  5. NSFGraduate Research Fellowship Program [DGE 1106400]
  6. Lindemann Trust Fellowship
  7. Air Force Office of Scientific Research Multidisciplinary University Research Initiative
  8. Deutsche Forschungsgemeinschaft through GRK [1621]
  9. U.S. Department of Energy, Office of Science
  10. Los Alamos National Laboratory
  11. SFB [1143]
  12. Engineering and Physical Sciences Research Council [1657076] Funding Source: researchfish

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By introducing a superconducting gap in Weyl or Dirac semimetals, the superconducting state inherits the non-trivial topology of their electronic structure. As a result, Weyl superconductors are expected to host exotic phenomena, such as nonzero-momentum pairing due to their chiral node structure, or zero-energy Majorana modes at the surface. These are of fundamental interest to improve our understanding of correlated topological systems, and, moreover, practical applications in phase-coherent devices and quantum applications have been proposed. Proximity-induced superconductivity promises to allow these experiments on nonsuperconducting Weyl semimetals. We show a new route to reliably fabricate superconducting microstructures from the nonsuperconducting Weyl semimetal NbAs under ion irradiation. The significant difference in the surface binding energy of Nb and As leads to a natural enrichment of Nb at the surface during ion milling, forming a superconducting surface layer (T-c similar to 3.5 K). Being formed from the target crystal itself, the ideal contact between the superconductor and the bulk may enable an effective gapping of the Weyl nodes in the bulk because of the proximity effect. Simple ion irradiation may thus serve as a powerful tool for the fabrication of topological quantum devices from monoarsenides, even on an industrial scale.

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