期刊
ACS ENERGY LETTERS
卷 2, 期 12, 页码 2713-2714出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00995
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资金
- EPSRC [EP/M009.580/1, EP/L01551X/1, EP/K016288/1, EP/L000202]
- Royal Society
- EPSRC [EP/L000202/1, EP/K016288/1, EP/M009580/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K016288/1, EP/L000202/1, EP/M009580/1] Funding Source: researchfish
The self-trapping of holes with the formation of a molecular X-2(-) anion is a well-established process in metal halide (MX) crystals, but V-center (2X(-) + h(+) -> X-2(-)) and H-center (X- + X-i(-) + h(+)-> X-2(-)) defects have not yet been confirmed in halide perovskite semiconductors. The I-2(-) split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.
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