期刊
ACS ENERGY LETTERS
卷 2, 期 9, 页码 2125-2132出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00648
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资金
- Major State Basic Research Development Program of China [2016YFA0204000]
- National Natural Science Foundation of China [91433105, 51602114]
- Special Fund for Strategic New Development of Shenzhen, China [JCYJ20160414102210144]
- New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry of Trade, Industry and Energy [20123010010130]
- National Research Foundation of Korea [22A20151113064] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Sb2Se3 is a promising candidate for thin-film photovoltaics, with a suitable band gap, benign grain boundaries, Earth-abundant and nontoxic constituents, and excellent stability. However, the low doping density (1013 cm(-3)) of Sb2Se3 absorber and back contact barrier limit its efficiency. Here we introduced a PbS colloidal quantum dot (CQD) film as the hole -transporting layer (HTL) to construct a n-i-p configured device and overcame these problems. Through simulation-guided optimization, we have significantly improved the efficiency of a Sb,Se-3 thin-fihn solar cell to a new certified record of 6.5%. The PbS CQD HTL not only minimized carrier recombination loss at the back contact and boosted carrier collection efficiency but also contributed photocurrent by its own near infrared absorption. Furthermore, these n-i-p devices also demonstrated improved device uniformity, achieving 6.39% in a 1.02 cm(2) device.
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