期刊
ACS ENERGY LETTERS
卷 3, 期 1, 页码 46-53出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.7b00976
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资金
- Korea Research Institute of Chemical Technology (KRICT), Republic of Korea [KK1702-A01]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade Industry & Energy (MOTIE) of the Republic of Korea [20163010012470]
- Global Frontier R&D Program on Center for Multiscale Energy System - National Research Foundation under the Ministry of Science, ICT & Future Planning, Korea [NRF-2016M3A6A7945503]
- KRICT-SKKU DRC program
In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn2+ to Sn4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH2)(2)SnI3, FASnI(3)) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI(3)-based PSCs.
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