相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Avalanche Breakdown Characteristics of Al1-xGaxAs0.56Sb0.44 Quaternary Alloys
X. Zhou et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2016)
InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
Shiyu Xie et al.
OPTICS EXPRESS (2016)
Impact ionization in AlxGa1-xAsySb1-y avalanche photodiodes
M. Grzesik et al.
APPLIED PHYSICS LETTERS (2014)
Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P
Jennifer S. L. Ong et al.
JOURNAL OF APPLIED PHYSICS (2014)
Excess Noise Characteristics of Thin AlAsSb APDs
Jingjing Xie et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
AlAsSb Avalanche Photodiodes with a Sub-mV/K Temperature Coefficient of Breakdown Voltage
Shiyu Xie et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2011)
Sensitivity of High-Speed Lightwave System Receivers Using InAlAs Avalanche Photodiodes
Daniel S. G. Ong et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2011)
Temperature Dependence of Avalanche Breakdown in InP and InAlAs
Lionel Juen Jin Tan et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2010)
Avalanche multiplication in InAlAs
Y. L. Goh et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
Temperature dependence of impact ionization in submicrometer silicon devices
D. J. Massey et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP
SK Mathis et al.
JOURNAL OF APPLIED PHYSICS (2001)
分享论文
