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Modeling the Growth of Single-Wall Carbon Nanotubes

期刊

TOPICS IN CURRENT CHEMISTRY
卷 375, 期 3, 页码 -

出版社

SPRINGER INTERNATIONAL PUBLISHING AG
DOI: 10.1007/s41061-017-0141-8

关键词

SWNT; Growth mechanisms; Modeling; CVD

资金

  1. European Union Seventh Framework Programme (FP7) [604472]
  2. French Research Funding Agency [ANR-13-BS10-0015-01]
  3. Agence Nationale de la Recherche (ANR) [ANR-13-BS10-0015] Funding Source: Agence Nationale de la Recherche (ANR)

向作者/读者索取更多资源

More than 20 years after their discovery, our understanding of the growth mechanisms of single-wall carbon nanotubes is still incomplete, in spite of a large number of investigations motivated by potential rewards in many possible applications. Among the many techniques used to solve this challenging puzzle, computer simulations can directly address an atomic scale that is hardly accessible by other experiments, and thereby support or invalidate different ideas, assumptions, or models. In this paper, we review some aspects of the computer simulation and theoretical approaches dedicated to the study of single-wall carbon nanotube growth, and suggest some ways towards a better control of the synthesis processes by chemical vapor deposition.

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