期刊
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
卷 5, 期 4, 页码 256-261出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2017.2706321
关键词
FET; gallium oxide; molecular beam epitaxy; normally-off; self-heating; silicon carbide; threshold voltage
资金
- EPSRC [EP/L021579/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L021579/1] Funding Source: researchfish
A method to improve thermal management of beta-Ga2O3 FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. For the same operating parameters an 18% increase in peak drain current and 15% reduction in lattice temperature are observed. Device dimensions may be substantially reduced without detriment to performance and normally off operation may be achieved.
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