期刊
RESULTS IN PHYSICS
卷 7, 期 -, 页码 1993-1999出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.rinp.2017.06.026
关键词
Sensitive; Oxide film; Capacitive; Resistance
资金
- Department of Physics, East Tehran Branch, Islamic Azad University, Tehran, Iran
In this study, fabrication of highly sensitive PdNPs/SiO2/Si hydrogen gas sensor using experimental and theoretical methods has been investigated. Using chemical method the PdNPs are synthesized and characterized by X-ray diffraction (XRD). The average size of PdNPs is 11 nm. The thickness of the oxide film was 20 nm and the surface of oxide film analyzed using Atomic-force microscopy (AFM). The C-V curve for the PdNPs/SiO2/Si hydrogen gas sensor in 1% hydrogen concentration and at the room temperature has been reported. The response time and recovery time for 1% hydrogen concentration at room temperature were 1.2 s and 10 s respectively. The response ( R%) for PdNPs/SiO2/Si MOS capacitor hydrogen sensor was 96%. The PdNPs/SiO2/Si MOS capacitor hydrogen sensor showed very fast response and recovery times compared to SWCNTs/PdNPs, graphene/PdNPs, nanorod/PdNPs and nanowire/PdNPs hydrogen gas sensors. (C) 2017 Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license.
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