期刊
OPTICA
卷 4, 期 2, 页码 218-221出版社
OPTICAL SOC AMER
DOI: 10.1364/OPTICA.4.000218
关键词
-
类别
资金
- Agence Nationale de la Recherche (ANR)-Direction Generale de l'Armement (DGA) (Octopuss)
- European Research Council (ERC) [306664]
- European Research Council (ERC) [306664] Funding Source: European Research Council (ERC)
Gallium arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro- and nanoscale, they allow strong interaction with quantum dots and quantum wells, and promise stunning optically active devices. However, gallium arsenide optical structures presently exhibit lower performance than their passive counterparts based on silicon, notably in nano-photonics, where the surface plays a chief role. Here, we report on advanced surface control of miniature gallium arsenide optical resonators using two distinct techniques that produce permanent results. One extends the lifetime of free carriers and enhances luminescence, while the other strongly reduces surface absorption and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to 6 x 10(6) at the telecom wavelength, greatly surpassing previous realizations and opening new prospects for gallium arsenide nanophotonics. (C) 2017 Optical Society of America
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据