HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors

Electrophysical properties of multilayered heteroepitaxial structures of Hg1-xCdxTe with x=0.3-0.4 grown by molecular beam epitaxy on silicon substrates are presented. The passivating effect of thin CdTe layers grown on top of the structures in single process is demonstrated. Comparison between experimental and theoretical temperature dependencies of reverse currents in n-on-p and p-on-n diodes fabricated by boron and arsenic ion implantation in vacancy-doped p-type and In-doped n-type Hg1-xCdxTe films, respectively, are presented. The influence of p-n junction position in double-layer heterostructure on temperature dependencies of reverse currents is examined. (C) 2016 WILEY-VCH Verlag GmbH & Co.