期刊
RSC ADVANCES
卷 6, 期 106, 页码 104318-104324出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ra21190a
关键词
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资金
- Department of Science and Technology, India [SR/S2/RJN-121/2012]
- CSIR [03(1349)/16/EMR-II]
- SPPU
- DST
- BCUD of Savitribai Phule Pune University
- Department of Science and Technology (Government of India) under a Ramanujan Fellowship [SR/S2/RJN-130/2012]
- CSIR-NCL-MLP project [028626]
- DST-SERB Fast-track Young scientist project [SB/FT/CS-116/2013]
- Board of Research in Nuclear Sciences (BRNS) (Government of India) [34/14/20/2015]
- INUP IITB project - DeitY, MCIT, Government of India
In this study, we report an enhancement in the field emission (FE) properties of ZnO nanostructures obtained by doping with Ni at a base pressure of similar to 1 x 10(-8) mbar, which were grown by a simple wet chemical process. The ZnO nanostructures exhibited a single-crystalline wurtzite structure up to a Ni doping level of 10%. FESEM showed a change in the morphology of the nanostructures from thick nanoneedles to nanoflakes via thin nanorods with an increase in the Ni doping level in ZnO. The turn-on field required to generate a field emission (FE) current density of 1 mu A cm(-2) was found to be 2.5, 2.3, 1.8 and 1.7 V mu mcm(-2) for ZnO (Ni0%), ZnO (Ni5%), ZnO (Ni7.5%) and ZnO (Ni10%), respectively. A maximum current density of similar to 872 mu A cm(-2) was achievable, which was generated at an applied field of 3.1 V mu m cm(-2) for a Ni doping level of 10% in ZnO. Long-term operational current stability was recorded at a preset value of 5 mA for a duration of 3 h and was found to be very high. The experimental results indicate that Ni-doped ZnO-based field emitters can open up many opportunities for their potential use as an electron source in flat panel displays, transmission electron microscopy, and the generation of X-rays. Thus, the simple low-temperature (similar to 80 degrees C) wet chemical synthesis approach and the robust nature of the ZnO nanostructure field emitter can provide prospects for the future development of cost-effective electron sources.
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