期刊
CRYSTALS
卷 7, 期 7, 页码 -出版社
MDPI
DOI: 10.3390/cryst7070187
关键词
GaN; infrared spectral range; THz spectral range; free-carrier absorption
资金
- National Center for Research and Development [PBS3/A3/23/2015]
GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type) on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples) or dopant ionization (p-type samples). In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at similar to 7 mu m due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to similar to 1 mu m at n similar to 10(20) cm(-3) doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1-10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 10(18) cm(-3) are highly transparent with the absorption coefficient below 3 cm(-1) at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.
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